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CeO2 Slurry |
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Product Overview
 Shallow
Trench Isolation(STI) is being used
to isolate device on the structure
of a silicon wafer which has been
replacing the older local oxidation
of silicon(LOCOS) technology for isolation
of smaller feature size. As design
rule came into 0.25 § or less reverse
etching is not workable for the acceptable
level due to aliginment problem. Most
critical process parameters are nitride
loss & oxide dishing which |
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demands high selectivity of oxide-to-nitrade.
However, the conventional oxide CMP slurries
such as Silica slurries cant¡¯s achieve the
high level of selectivity due to silicon nitride
layer, while Cerium oxide is the most desirable
slurry because of its high selectivity over
nitride. ANP¡¯s Ceria Slurry has been developed
to meet such a strong demand of the slurry
which could provide high selectivity, fast
remonal rate of oxide, low defectivity &
good stability. |
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Product Properties
- High throughput process material
- Low scratch defectivity
- High removal rate of oxide film
- High selectivity of oxide-to-nitride
- Excellent dispersion stability
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