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| Materials for Electronics/ Display |
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Product Overview |
 Shallow Trench Isolation(STI) is being used to isolate device on the structure of a silicon wafer which has been replacing the older local oxidation of silicon(LOCOS) technology for isolation of smaller feature size. As design rule came into 0.25 § or less reverse etching is not workable for the acceptable level due to aliginment problem. Most critical process parameters are nitride loss & oxide dishing which
demands high selectivity of oxide-to-nitrade. However, the conventional oxide CMP slurries such as Silica slurries cant¡¯s achieve the high level of selectivity due to silicon nitride layer, while Cerium oxide is the most desirable slurry because of its high selectivity over nitride. ANP¡¯s Ceria Slurry has been developed to meet such a strong demand of the slurry which could provide high selectivity, fast remonal rate of oxide, low defectivity & good stability. |
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Product Properties |
- High throughput process material
- Low scratch defectivity
- High removal rate of oxide film
- High selectivity of oxide-to-nitride
- Excellent dispersion stability
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